Physics-electrical hybrid model for real time impedance matching and remote plasma characterization in RF plasma sources.

Inactivation of Gram-Negative Bacteria by Low-Pressure RF Remote Plasma Excited in N2-O2 Mixture and SF6 Gases

The role of low-pressure RF plasma in the inactivation of Escherichia coli O157, Klebsiella pneumoniae, Proteus mirabilis, and Enterobacter sakazakii using N2-O2 and SF6 gases was assessed. 1×109 colony-forming units (CFUs) of each bacterial isolate were placed on three polymer foils. The effects of pressure, power, distance from the source, and exposure time to plasma gases were optimized. The...

An Automatic Real Time Impedance Matching System for Use in an RF Electrostatics Accelerator Ion Source

Online tuning of impedance matching circuit for long pulse inductively coupled plasma source operation--an alternate approach.

Impedance matching circuit between radio frequency (RF) generator and the plasma load, placed between them, determines the RF power transfer from RF generator to the plasma load. The impedance of plasma load depends on the plasma parameters through skin depth and plasma conductivity or resistivity. Therefore, for long pulse operation of inductively coupled plasmas, particularly for high power (...

Broadband Antenna Matching Network Design and Application for RF Plasma Ion Source

The RF ion source at Spallation Neutron Source has been upgraded to meet higher beam power requirement. One important subsystem for efficient operation of the ion source is the 2MHz RF impedance matching network. The real part of the antenna impedance is very small and is affected by plasma density for 2MHz operating frequency. Previous impedance matching network for the antenna has limited tun...

Morphological, structural and photoresponse characterization of ZnO nanostructure films deposited on plasma etched silicon substrates

ZnO nanostructure films were deposited by radio frequency (RF) magnetron sputtering on etched silicon (100) substrates using dry Ar/SF6 plasma, at two etching times of 5 min and 30 min, and on non etched silicon surface. Energy dispersive X-ray (EDX) technique was employed to investigate the elements contents for etched substrates as well as ZnO films, where it is found to be stoichiometric. Su...